View MMUN2134LT1_1281880.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MMUN2111LT1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
http://onsemi.com
PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND)
PIN 1 BASE (INPUT)
R1 R2
* * * * *
Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel.
3 1 2 SOT-23 CASE 318 STYLE 6
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
MARKING DIAGRAM
A6x M
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Thermal Resistance - Junction-to-Lead Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad Symbol PD Max 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) 508 (Note 1.) 311 (Note 2.) 174 (Note 1.) 208 (Note 2.) -55 to +150 Unit mW C/W C/W A6x = Device Marking x = A - L (See Page 2) M = Date Code
RJA RJL TJ, Tstg
DEVICE MARKING INFORMATION
C/W C
See specific marking information in the device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
November, 2001 - Rev. 2
Publication Order Number: MMUN2111LT1/D
MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device MMUN2111LT1 MMUN2111LT3 MMUN2112LT1 MMUN2112LT3 MMUN2113LT1 MMUN2113LT3 MMUN2114LT1 MMUN2114LT3 MMUN2115LT1 (Note 3.) MMUN2115LT3 MMUN2116LT1 (Note 3.) MMUN2116LT3 MMUN2130LT1 (Note 3.) MMUN2130LT3 MMUN2131LT1 (Note 3.) MMUN2131LT3 MMUN2132LT1 (Note 3.) MMUN2132LT3 MMUN2133LT1 (Note 3.) MMUN2133LT3 MMUN2134LT1 (Note 3.) MMUN2134LT3 Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Marking A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 - - nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
V(BR)CBO V(BR)CEO
Vdc Vdc
http://onsemi.com
2
MMUN2111LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5.)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 - 60 100 140 140 250 250 5.0 15 27 140 130 - - - - - - - - - - - - 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1
VCE(sat)
VOL - - - - - - - - - - - VOH MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 MMUN2130LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 - 0.8 0.055 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 - 1.0 0.1 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 - 1.2 0.185 4.9 - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 -
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k)
Vdc
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) Input Resistor
k
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1 5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
R1/R2
http://onsemi.com
3
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1
250 PD , POWER DISSIPATION (MILLIWATTS) 200 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 75C 0.1 25C
150 100 50 0 -50 RJA = 625C/W
0
50
100
150
0.01
0
20
40
60
80
TA, AMBIENT TEMPERATURE (C)
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V 4
Figure 2. VCE(sat) versus IC
100
TA = 75C 25C -25C
Cob , CAPACITANCE (pF)
3
f = 1 MHz lE = 0 V TA = 25C
2
1
10
1
10 IC, COLLECTOR CURRENT (mA)
100
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
100
Figure 4. Output Capacitance
75C
25C TA = -25C
100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
10 1
10
TA = -25C 25C 75C
0.1
1
0.01 0.001 0 1 2
VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
http://onsemi.com
4
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 1 75C VCE = 10 V
TA = 75C 100
25C
-25C
0.1
0.01
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C
100
75C
25C TA = -25C
Cob , CAPACITANCE (pF)
3
10
1
2
0.1 VO = 5 V 0 1 2 3 4 5 6 7 8 9 10
1
0.01
0
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
http://onsemi.com
5
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 0.1 75C 1000 h FE , CURRENT GAIN (NORMALIZED) TA = 75C 25C 100 -25C
25C
0.01
0
10 20 30 IC, COLLECTOR CURRENT (mA)
40
10
1
10 IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 10 1 0.1 0.01
Figure 13. DC Current Gain
TA = 75C
25C -25C
VO = 5 V 0 1 2 3 4 5 6 7 8 9 10
0
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100 TA = -25C 10
VO = 2 V 25C 75C
Vin , INPUT VOLTAGE (VOLTS)
1
0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
http://onsemi.com
6
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25C -25C TA = 75C
0.1
0.01
0.001
0
20 40 60 IC, COLLECTOR CURRENT (mA)
80
Figure 17. VCE(sat) versus IC
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C 100
Figure 18. DC Current Gain
TA = 75C IC, COLLECTOR CURRENT (mA) -25C
25C
10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
+12 V TA = -25C 25C 75C
Typical Application for PNP BRTs
1
LOAD 0.1
0
10
20 30 IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
http://onsemi.com
7
MMUN2111LT1 Series INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
http://onsemi.com
8
MMUN2111LT1 Series
SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1 PREHEAT ZONE 1 RAMP" 200C
STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP"
STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170C 160C
STEP 6 STEP 7 VENT COOLING 205 TO 219C PEAK AT SOLDER JOINT
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
150C
100C 100C
140C
SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
50C
DESIRED CURVE FOR LOW MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 23. Typical Solder Heating Profile
http://onsemi.com
9
MMUN2111LT1 Series
PACKAGE DIMENSIONS
SOT-23 TO-236AB CASE 318-08 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
http://onsemi.com
10
MMUN2111LT1 Series
Notes
http://onsemi.com
11
MMUN2111LT1 Series
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
http://onsemi.com
12
MMUN2111LT1/D

▲Up To Search▲

Price & Availability of MMUN2134LT1

	To Download MMUN2134LT1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .